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C Plane Polished Sapphire Single Crystal Wafer 2 Inch 0001 430um

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C Plane Polished Sapphire Single Crystal Wafer 2 Inch 0001 430um

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Brand Name : BonTek

Model Number : Sapphire (Al2O3)

Certification : ISO:9001

Place of Origin : China

MOQ : 5 Pieces

Price : Negotiable

Payment Terms : T/T

Supply Ability : 10000 pieces/Month

Delivery Time : 1-4 weeks

Packaging Details : Cassette, Jar, Film package

Material : Sapphire

Growth : Kyropoulos method

Melting Point : 2040 degrees C

Thermal Conductivity : 27.21 W/(m x K) at 300 K

CTE : 5.6 x 10 -6 /K (parallel C-axis); 5.0 (perpendicular C-axis) x 10 -6 /K

Hardness : Knoop 2000 kg/mm 2 with 2000g indenter

Specific Heat Capacity : 419 J/(kg x K)

Dielectric Constant : 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz

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2 Inch C Plane 0001 430um Sapphire Single Crystal Wafers Polished Wafer

Sapphire is a single crystal of alumina and is the second-hardest material in nature, after diamond. Sapphire has good light transmittance, high strength, collision resistance, wear resistance, corrosion resistance and high temperature and high pressure resistance, biocompatibility, is an ideal substrate material for the production of semiconductor optoelectronic devices, the electrical properties of sapphire make it become the substrate material for the production of white and blue LED.

Our company's long-term production thickness ≧0.1mm, shape size ≧Φ2" high precision sapphire wafer. In addition to the conventional Φ2 ", Φ4 ", Φ6 ", Φ8 ", other sizes can be customized, please contact our sales staff.

C Plane Polished Sapphire Single Crystal Wafer 2 Inch 0001 430umC Plane Polished Sapphire Single Crystal Wafer 2 Inch 0001 430umC Plane Polished Sapphire Single Crystal Wafer 2 Inch 0001 430um

Item 2-inch C-plane(0001) 430μm Sapphire Wafers
Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3
Grade Prime, Epi-Ready
Surface Orientation C-plane(0001)
C-plane off-angle toward M-axis 0.2 +/- 0.1°
Diameter 50.8 mm +/- 0.1 mm
Thickness 430 μm +/- 25 μm
Primary Flat Orientation A-plane(11-20) +/- 0.2°
Primary Flat Length 16.0 mm +/- 1.0 mm
Single Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished Front Surface Epi-polished, Ra < 0.2 nm (by AFM)
(DSP) Back Surface Epi-polished, Ra < 0.2 nm (by AFM)
TTV < 10 μm
BOW < 10 μm
WARP < 10 μm
Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.

OPTICAL PROPERTIES of SAPPHIRE Al2O3

Transmission Range

0.17 to 5.5 microns

Refractive Index

1.75449 (o) 1.74663 (e) at 1.06 microns

Reflection Loss

at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2%

Index of Absorption

0.3 x 10-3 cm-1 at 2.4 microns

dN/dT

13.7 x 10-6 at 5.4 microns

dn/dm = 0

1.5 microns

PHYSICAL PROPERTIES of SAPPHIRE Al2O3

Density

3.97 g/cm3

Melting Point

2040 degrees C

Thermal Conductivity

27.21 W/(m x K) at 300 K

Thermal Expansion

5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K

Hardness

Knoop 2000 kg/mm 2 with 2000g indenter

Specific Heat Capacity

419 J/(kg x K)

Dielectric Constant

11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz

Young's Modulus (E)

335 GPa

Shear Modulus (G)

148.1 GPa

Bulk Modulus (K)

240 GPa

Elastic Coefficients

C11=496 C12=164 C13=115
C33=498 C44=148

Apparent Elastic Limit

275 MPa (40,000 psi)

Poisson Ratio

0.25

Orientation

R-plane, C-plane, A-plane, M-plane or a specified orientation

Orientation Tolerance

± 0.3°

Diameter

2 inches, 3 inches, 4 inches, 6 inches, 8 inches or others

Diameter Tolerance

0.1mm for 2 inches, 0.2mm for 3 inches, 0.3mm for 4 inches, 0.5mm for 6 inches

Thickness

0.25mm, 0.33mm, 0.43mm, 0.65mm, 1mm or others;

Thickness Tolerance

25μm

Primary Flat Length

16.0±1.0mm for 2 inches, 22.0±1.0mm for 3 inches, 30.0±1.5mm for 4 inches, 47.5/50.0±2.0mm for 6 inches

Primary Flat Orientation

A-plane (1 1-2 0 ) ± 0.2°; C-plane (0 0-0 1 ) ± 0.2°, Projected C-Axis 45 +/- 2°

TTV

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

BOW

≤10µm for 2 inches, ≤15µm for 3 inches, ≤20µm for 4 inches, ≤25µm for 6 inches

Front Surface

Epi-Polished (Ra< 0.3nm for C-plane, 0.5nm for other orientations)

Back Surface

Fine ground (Ra=0.6μm~1.4μm) or Epi-polished

Packaging

Packaged in a class 100 clean room environment

C Plane Polished Sapphire Single Crystal Wafer 2 Inch 0001 430um


Product Tags:

Polished Sapphire Single Crystal Wafer

      

C Plane Single Crystal Wafer

      

2 Inch Sapphire Substrate Wafer

      
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