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4 Inch LNOI Wafer Achieving Compact Photonic Integration

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4 Inch LNOI Wafer Achieving Compact Photonic Integration

Brand Name : BonTek

Model Number : LNOI Wafer

Certification : ISO:9001, ISO:14001

Place of Origin : China

MOQ : 25 pcs

Price : $2000/pc

Payment Terms : T/T

Supply Ability : 50000 pcs/Month

Delivery Time : 1-4 weeks

Packaging Details : Cassette/ Jar package, vaccum sealed

Product : LiNbO3 On Insulator

Diameter : 4 inch, Φ100mm

Top Layer : Lithium Niobate

Top Thickness : 300~600nm

Insolation : SiO2 Thermal Oxide

Insolation Thickness : 2000±15nm; 3000±50nm; 4700±100nm

Substrate : Silicon

Application : Optical Waveguides and Microwaveguides

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Achieving Compact Photonic Integration With 4-Inch LNOI Wafers

LNOI stands for Lithium Niobate on Insulator, which is a specialized substrate technology used in the field of integrated photonics. LNOI substrates are fabricated by transferring a thin layer of lithium niobate (LiNbO3) crystal onto an insulating substrate, typically silicon dioxide (SiO2) or silicon nitride (Si3N4). This technology offers unique advantages for the development of compact and high-performance photonic devices.

The fabrication of LNOI substrates involves bonding a thin layer of LiNbO3 onto an insulating layer using techniques like wafer bonding or ion-cutting. This results in a structure where LiNbO3 is suspended on a non-conductive substrate, providing electrical isolation and reducing the optical waveguide losses.

Applications of LNOI:

  • Integrated Photonics
  • Optical Communication
  • Sensing and Metrology
  • Quantum Optics

LNOI Wafer
Structure LN / SiO2 / Si LTV / PLTV < 1.5 μm ( 5∗ 5 mm2 ) / 95%
Diameter Φ100 ± 0.2 mm Edge Exclution 5 mm
Thickness 500 ± 20 μm Bow Within 50 μm
Primary Flat Length 47.5 ± 2 mm
57.5 ± 2 mm		 Edge Trimming 2 ± 0.5 mm
Wafer Beveling R Type Environmental Rohs 2.0
Top LN Layer
Average Thickness 400/600±10 nm Uniformity < 40nm @17 Points
Refraction index no > 2.2800, ne < 2.2100 @ 633 nm Orientation X axis ± 0.3°
Grade Optical Surface Ra < 0.5 nm
Defects >1mm None;
≦1 mm Within 300 total		 Delamination None
Scratch >1cm None;
≦1cm Within 3		 Primary Flat Perpendicular to +Y Axis ± 1°
Isolation SiO2 Layer
Average Thickness 2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nm Uniformity < ±1% @17 Points
Fab. Method Thermal Oxide Refraction index 1.45-1.47 @ 633 nm
Substrate
Material Si Orientation <100> ± 1°
Primary Flat Orientation <110> ± 1° Resistivity > 10 kΩ·cm
Backside Contamination No visible stain Backside Etch

4 Inch LNOI Wafer Achieving Compact Photonic Integration4 Inch LNOI Wafer Achieving Compact Photonic Integration


4 Inch LNOI Wafer Achieving Compact Photonic Integration

4 Inch LNOI Wafer Achieving Compact Photonic Integration


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LNOI Piezoelectric Wafer

      

4 Inch LNOI Wafer

      

300nm LiNbO3 On Insulator

      
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